Originally Aired - Wednesday, January 29 • 11:15 AM - 12:00 PM Pacific Time (US & Canada)
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Location: Ballroom B
Title: Free Signal Integrity? How Understanding Anisotropic Materials & Tolerances Could Increase Performance at 112/224Gbps & Beyond
Session Handouts Available Upon Speaker Approval: 1
Description:
The “need for speed” in AI systems is driven by their requirement to process large data sets, both during training and application. Channel design for is constrained by the balance between acceptable loss budget and power consumed in equalization and error correction. Reducing channel loss can enable lower power or longer unrepeated channel lengths. Historically, high-speed serial links focused on material selection to manage attenuation. In 224 Gbps PAM4 systems, however, second-order factors like impedance variations, cross talk, and power loss into cavities significantly impact the loss budget. While perfectly transparent virtual channels can be designed in simulations, real fabricated boards differ due to manufacturing variations and limited understanding of material anisotropy. As channel bandwidths increase to 56 GHz and above, accurately defining material behavior in simulations becomes crucial. This paper analyzes second-order design features using precision measurements of test vehicles. We propose a metric-driven methodology based on AI/ML to determine relevant parameters for simulating anisotropic behavior that matches both time and frequency domain measurements. When second-order factors are accounted for, accurate measurement-simulation correlation is possible, enabling the design of digital twins that predict system performance. These digital twins, combined with AI/ML techniques, allow for design space exploration and sensitivity analysis to identify manufacturing tolerances necessary for creating 224 Gbps PAM4 channels with acceptable total loss. This process highlights the importance of characterizing anisotropic dielectric properties and including them in simulations to achieve better than 2% measurement-simulation correlation in impedance profiles. This approach allows for optimized geometries and controlled geometry designs.
Type: Technical Paper Session
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